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Layered 2D graphene oxide (GO) films are integrated with silicon nitride(SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearityvia four wave mixing (FWM). Owing to the strong light matter interactionbetween the SiN waveguides and the highly nonlinear GO films, the FWMperformance of the hybrid waveguides is significantly improved. SiN waveguideswith both uniformly coated and patterned GO films are fabricated based on atransfer free, layer by layer GO coating method together with standardphotolithography and lift off processes, yielding precise control of the filmthickness, placement and coating length. Detailed FWM measurements are carriedout for the fabricated devices with different numbers of GO layers and atdifferent pump powers. By optimizing the trade off between the nonlinearity andloss, we obtain a significant improvement in the FWM conversion efficiency of7.3 dB for a uniformly coated device with 1 layer of GO and 9.1 dB for apatterned device with 5 layers of GO. We also obtain a significant increase inFWM bandwidth for the patterned devices. A detailed analysis of the influenceof pattern length and position on the FWM performance is performed. Based onthe FWM measurements, the dependence of GOs third-order nonlinearity on layernumber and pump power is also extracted, revealing interesting physicalinsights about the 2D layered GO films. Finally, we obtain an enhancement inthe effective nonlinear parameter of the hybrid waveguides by over a factor of100. These results verify the enhanced nonlinear optical performance of SiNwaveguides achievable by incorporating 2D layered GO films.

Enhanced four-wave-mixing and 3rd order optical nonlinearity in SiN nanowires integrated with graphene oxide films