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We characterize composition and structure of ultrathin nickel silicide duringformation from 3 nm Ni films on Si(100) using in-situ high resolution ionscattering and high resolution transmission electron microscopy. We show thetransition to occur in discrete steps, in which an intermediate phase isobserved within a narrow range of temperature from 230 oC to 290 oC. The filmcomposition of this intermediate phase is found to be 50% Ni:50% Si, withoutevidence for long-range structure, indicating the film to be a homogeneousmonosilicide NiSi phase. The final phase is resemblant of the cubic disilicideNiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si.Along the [100] axis, the lattices of the film and the substrate are found inperfect alignment. Due to the epitaxial growth of the silicide, a contractionof the c lattice constant of the film by 0.7-1% is detected.

In-situ Nanoscale Characterization of Composition and Structure during Formation of Ultrathin Nickel Silicide