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As wide bandgap electronic devices have continued to advance in both sizereduction and power handling capabilities, heat dissipation has become asignificant concern. To mitigate this, chemical vapor deposited (CVD) diamondhas been demonstrated as an effective solution for thermal management of thesedevices by directly growing onto the transistor substrate. A key aspect ofpower and radio frequency (RF) electronic devices involves transient switchingbehavior, which highlights the importance of understanding the temperaturedependence of the heat capacity and thermal conductivity when modeling andpredicting device electrothermal response. Due to the complicatedmicrostructure near the interface between CVD diamond and electronics, it isdifficult to measure both properties simultaneously. In this work, we use timedomain thermoreflectance (TDTR) to simultaneously measure the in plane thermalconductivity and heat capacity of a 1 um thick CVD diamond film, and also usethe pump as an effective heater to perform temperature dependent measurements.The results show that the in plane thermal conductivity varied slightly with anaverage of 103 W per meter per K over a temperature range of 302 to 327 K,while the specific heat capacity has a strong temperature dependence over thesame range and matches with heat capacity data of natural diamond inliterature.

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films