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Here we report the development of high-efficiency microscale GaAs laser powerconverters, and their successful transfer printing onto silicon substrates,presenting a unique, high power, low-cost and integrated power supply solutionfor implantable electronics, autonomous systems and internet of thingsapplications. We present 300 {\mu}m diameter single-junction GaAs laser powerconverters and successfully demonstrate the transfer printing of these devicesto silicon using a PDMS stamp, achieving optical power conversion efficienciesof 48% and 49% under 35 and 71 W/cm2 808 nm laser illumination respectively.The transferred devices are coated with ITO to increase current spreading andare shown to be capable of handling very high short-circuit current densitiesup to 70 A/cm2 under 141 W/cm2 illumination intensity (~1400 Suns), while theiropen circuit voltage reaches 1235 mV, exceeding the values of pre-transferdevices indicating the presence of photon-recycling. These optical powersources could deliver Watts of power to sensors and systems in locations wherewired power is not an option, while using a massively parallel, scalable, andlow-cost fabrication method for the integration of dissimilar materials anddevices.

Micro-transfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications