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Here, we report the first successful exfoliation of two-dimensionalTi$_3$C$_2$T$_x$ MXene through selective etching of silicon from titaniumsilicon carbide (Ti$_3$SiC$_2$) MAX. The successful etching and exfoliation ofMXene is confirmed through the shifting of all (00l) peaks to lower anglesalong with the increase in c-lattice parameter as determined by X-raydiffraction technique to detail the material structure. The c-lattice parameterof multilayered MXene was found to be 19.34{\AA} which was increased to 26.22{\AA} after delamination process indicating the successful intercalation ofTMA+ ions within the MXene Sheets. The scanning electron microscopy (SEM)images show the formation of 2D layered structure. The magnetic measurement ofthe etched MXene sample was measured using superconducting quantum interferencedevice (SQUID: Quantum Design). The magnetization vs magnetic (M-H) curvesclearly indicate the ferromagnetic-dominant hysteresis loops at low-temperatureas well as at room-temperature along with the presence of small diamagneticphase due to the presence of silicon carbide (SiC) present in MXene structure.The presence of SiC phase is confirmed through XRD and Raman spectra that showthe sharp peaks and vibrational modes of SiC within 2D MXene structure. Thepresent work shows the co-existence of ferromagnetic and diamagnetic phasesmaking it suitable 2D material for future spintronics devices.

Silicon carbide-assisted co-existence of magnetic phases in well-optimized Ti$_3$SiC$_2$-etched MXene