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Photoexcited electron-hole pairs (excitons) in transition metaldichalcogenides (TMDC) experience an effective force when these materials arenon-uniformly strained. In the case of strain produced by a sharp tip pressingat the center of a suspended TMDC membrane, the excitons are transported to thepoint of the highest strain at the center of the membrane. This effect, excitonfunneling, can be used to increase photoconversion efficiency in TMDC, toexplore exciton transport, and to study correlated states of excitons arisingat their high densities. Here, we analyze the limits of funneling efficiency inrealistic device geometries. The funneling efficiency in realistic monolayerTMDCs is found to be low, $ <5 \;\%$ both at room and low temperatures. Thisresults from dominant diffusion at room temperature and short exciton lifetimesat low temperatures. On the other hand, in TMDC heterostructures with longexciton lifetimes the funneling efficiency reaches $\sim 50\;\%$ at roomtemperature, as the exciton density reaches thermal equilibrium in the funnel.Finally, we show that Auger recombination limits funneling efficiency forintense illumination sources.

Limits of funneling efficiency in non-uniformly strained 2D semiconductors