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Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors thatimplement moderate gain (typically 5 to 25) using a thin highly doped p++ layerbetween the high resistivity p-bulk and the junction of the sensor. Thepresence of gain allows excellent time measurement for impinging minimumionizing charged particles. An important design consideration is the sensorthickness, which has a strong impact on the achievable time resolution. Wepresent the result of measurements for LGADs of thickness between 20 micro-mand 50 micro-m. The data are fit to a formula that captures the impact of bothelectronic jitter and Landau fluctuations on the time resolution. The dataillustrate the importance of having a saturated electron drift velocity and alarge signal-to-noise in order to achieve good time resolution. Sensors of 20micro-m thickness offer the potential of 10 to 15 ps time resolution permeasurement, a significant improvement over the value for the 50 micro-msensors that have been typically used to date.

Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)