English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The ultra-wide bandgap, high breakdown electric field, and large-areaaffordable substrates make \b{eta}-Ga2O3 promising for applications ofnext-generation power electronics while its thermal conductivity is at leastone order of magnitude lower than other wide/ultrawide bandgap semiconductors.To avoid the degradation of device performance and reliability induced by thelocalized Joule-heating, aggressive thermal management strategies areessential, especially for high-power high-frequency applications. This workreports a scalable thermal management strategy to heterogeneously integratewafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermalconductivity SiC substrates by ion-cutting technique. The thermal boundaryconductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivityof the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance(TDTR) to evaluate the effects of interlayer thickness and thermal annealing.Materials characterizations were performed to understand the mechanisms ofthermal transport in these structures. The results show that the\b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness andthe \b{eta}-Ga2O3 thermal conductivity increases more than twice afterannealing at 800 oC due to the removal of implantation-induced strain in thefilms. A Callaway model is built to understand the measured thermalconductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermalconductivity confirm the uniformity and high-quality of the bonding andexfoliation. Our work paves the way for thermal management of power electronicsand \b{eta}-Ga2O3 related semiconductor devices.

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique