English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Point defects in hexagonal boron nitride have emerged as a promising quantumlight source due to their bright and photostable room temperature emission. Inthis work, we study the incorporation of quantum emitters during chemical vapordeposition growth on a nickel substrate. Combining a range of characterizationtechniques, we demonstrate that the incorporation of quantum emitters islimited to (001) oriented nickel grains. Such emitters display improvedemission properties in terms of brightness and stability. We further utilizethese emitters and integrate them with a compact optical antenna enhancinglight collection from the sources. The hybrid device yields average saturationcount rates of ~2.9 x106 cps and an average photon purity of ~90%. Our resultsadvance the controlled generation of spatially distributed quantum emitters inhBN and demonstrate a key step towards on-chip devices with maximum collectionefficiency.

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride