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Advances in complex oxide heteroepitaxy have highlighted the enormouspotential of utilizing strain engineering via lattice mismatch to controlferroelectricity in thin-film heterostructures. This approach, however, lacksthe ability to produce large and continuously variable strain states, thuslimiting the potential for designing and tuning the desired properties offerroelectric films. Here, we observe and explore dynamic strain-inducedferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto astretchable polymer substrate. Using a combination of scanning probemicroscopy, optical second harmonic generation measurements, and atomisticmodeling, we demonstrate robust room-temperature ferroelectricity in SrTiO$_3$with 2.0% uniaxial tensile strain, corroborated by the notable features of180{\deg} ferroelectric domains and an extrapolated transition temperature of400 K. Our work reveals the enormous potential of employing oxide membranes tocreate and enhance ferroelectricity in environmentally benign lead-free oxides,which hold great promise for applications ranging from non-volatile memoriesand microwave electronics.

Strain-Induced Room-Temperature Ferroelectricity in SrTiO$_3$ Membranes