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Novel devices such as tunneling field-effect transistors (FETs) andferroelectric FETs have been demonstrated to break the subthreshold swing (SS)limit with sub-60 mV/decade switching for further low voltage/low powerapplications. In this paper, SS of sub-60 mV/dec was firstly observed inInAlN/GaN high electron mobility transistors (HMETs): an average SS of 30mV/dec over three orders of magnitude in drain-source (Ids) and a minimumpoint-by-point SS of 15 mV/dec were achieved in the InAlN/GaN HEMTs with gatelength (Lg) of 40 nm. It is found that SS decreases with drain-source voltage(Vds) as well as Lg, and falls below 60 mV/dec when Lg < 100 nm. The decreaseof SS as the device dimension scales down is attributed to the tunneling ofhigh energy electrons from channel to the surface. The SS decreasing with thenanoscale gate length shows the great potential of the InAlN/GaN HEMTs to beapplied in future logic switches.

Sub-60 mV/decade switching via high energy electrons tunneling in nanoscale gallium nitride field-effect transistors