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In this letter, N2 and forming gas (FG) were used during ohmic contactannealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lowerohmic contact resistance (RC) while FG annealing features lower sheetresistance (Rsheet). Then FG/N2 two-step annealing was used to achieve asubthreshold swing (SS) of 113 mV/dec, an on/off current (Ion/Ioff) ratio of ~106, a transconductance (gm) peak of 415 mS/mm, a record low drain-inducingbarrier lowing (DIBL) of 65 mV/V, and a record high power gain cutoff frequency(fmax) of 270 GHz on 50-nm InAlN/GaN HEMT on Si.

Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing