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Pristine graphene and graphene-based heterostructures exhibit exceptionallyhigh electron mobility and conductance if their surface contains fewelectron-scattering impurities. Here, we reveal a universal connection betweengraphene's carrier mobility and the variation of its electrical conductancewith carrier density. Our model of graphene conductivity is based on aconvolution of carrier density and its uncertainty, which reproduces theobserved universality. Taking a single conductance measurement as input, thismodel accurately predicts the full shape of the conductance versus carrierdensity curves for a wide range of reported graphene samples. We verify theconvolution model by numerically solving the Boltzmann transport equation toanalyse in detail the effects of charged impurity scattering on carriermobility. In this model, we also include optical phonons, which relaxhigh-energy charge carriers for small impurity densities. Our numerical andanalytical results both capture the universality observed in experiment andprovide a way to estimate all key transport parameters of graphene devices. Ourresults demonstrate how the carrier mobility can be predicted and controlled,thereby providing insights for engineering the properties of 2D materials andheterostructures.

Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities