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We report on the observation of non-metallic electrical conduction, resistiveswitching, and a negative temperature coefficient of resistance incluster-assembled nanostructured gold films above the electrical percolationand in strong-coupling regime, from room to cryogenic temperatures (24K). Thestructure of the films is characterized by an extremely high density ofrandomly oriented crystalline nanodomains, separated by grain boundaries. Theobserved behavior can be explained by considering space charge limitedconduction and Coulomb blockade phenomena highlighting the influence of thehigh density of defects and grain boundaries on the localization of conductionelectrons. Our findings have implications for a broad class of resistiveswitching systems based on random assemblies of nanoobjects.

Anomalous Electrical Conduction and Negative Temperature Coefficient of Resistance in Nanostructured Gold Resistive Switching Films