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In this work, we have demonstrated wide-composition-range\b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for\b{eta}-(AlxGa1-x)2O3 covering bandgaps from 4.9 to 6.4 eV. With optimizedthermal annealing conditions, the \b{eta}-Ga2O3 binary thin films on sapphiresubstrates transformed to the \b{eta}-(AlGa)2O3 ternary thin films withdifferent compositions. The binary to ternary transformation resulted from theAl atom diffusion from sapphire into the oxide layers; meanwhile, the Ga atomsdiffused into sapphire leading to thicker thin films than the originalthicknesses. The interdiffusion processes were confirmed by transmissionelectron microscopy, which enhanced in proportion to the annealing temperature.The strain states of the \b{eta}-(AlGa)2O3 films have been analyzed showingreduced in-plane compressive strain with higher annealing temperature; and thefilm eventually became strain-free when the temperature was 1400 oCcorresponding to the Al composition of 77%. The proposed method is promisingfor the preparation of the \b{eta}-(AlGa)2O3 thin films without employingsophisticated direct-growth techniques for alloys.

\b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%