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We investigated the influence of the Ta buffer layer on the thermal stabilityof polycrystalline Ta/ MnN/ CoFeB exchange bias systems, showing high exchangebias of about 1800 Oe at room temperature. The thermal stability of thosetrilayer systems is limited by nitrogen diffusion that occurs during annealingprocesses. Most of the nitrogen diffuses into the Ta buffer layer, which isnecessary for good crystal growth of MnN and thus a crucial component of theexchange bias system. In order to improve the thermal stability, we preparedexchange bias stacks where we varied the Ta thickness to look for an optimumvalue that guarantees stable and high exchange over a broad temperature range.Our findings show that thin layers of 2-5 nm Ta indeed support stable exchangebias up to annealing temperatures of more than $550^{\circ}$C. Furthermore, wefound that the introduction of a TaN$_{\text{x}}$ layer between MnN and Ta,acting as a barrier, can prevent nitrogen diffusion. However, our results showthat those measures, even though being beneficial in terms of thermalstability, often lead to decreased crystallinity and thus lower the exchangebias.

Improving thermal stability of MnN/CoFeB exchange bias systems by optimizing the Ta buffer layer