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Lateral heterostructures of two-dimensional (2D) materials, integratingdifferent phases or materials into a single piece of nanosheet, have attractedintensive research interests in the past few years for high-performanceelectronic and optoelectronic devices. It also holds promises to significantlyimprove the performance and enable new functions of spintronic devices. It isimperative to have a 2D material possessing diverse electronic and magneticproperties that are required in spintronics. In this work, using densityfunctional theory calculations, we surveyed all IV, V and VI group transitionmetal dichalcogenides (TMDs) and discovered that CrS2 has the most diverseelectronic and magnetic properties: antiferromagnetic (AFM) metallic 1T phase,nonmagnetic (NM) semiconductor 2H phase, and ferromagnetic (FM) semiconductor1T_prime phase with a Curie temperature of ~1000 K. More interestingly, wefound that a tensile or compressive strain could turn 1T_prime phase into aspin-up or spin-down half metal. Such a unique feature enables designingstrain-controlled spintronic devices using a single piece of CrS2 crystal withimproved energy efficiency, which remains a challenge in miniaturization ofspintronic devices. In-depth analysis attributed the unique strain tunabilityto the interplay between strain-induced lattice deformation and differentspatial orientation of the spin-up/spin-down electronic orbitals. Aprototypical design of a simple spin-valve logic device operated by strain isalso presented.

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices