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Here we report successful single crystal growth of new possible magnetictopological insulator (MTI) FeBi2Te4 by self-flux method via vacuumencapsulation process. The detailed Rietveld analysis of Powder XRD data showsthe as grown MTI crystal to be mainly dominated by FeBi2Te4 phase along withminority phases of Bi2Te3 and FeTe. Scanning electron microscope (SEM) imageshows the morphology of as grown MTI single crystal to be of layered typelaminar structure. Raman spectroscopy of the crystal exhibited three distinctphonon modes at 65, 110, and 132 cm-1 along with two split secondary modes at90, and 144cm-1. The secondary split modes are result of FeTe intercalation inBi2Te3 unit cell. Magneto-resistance measurement has been performed atdifferent temperatures i.e. 200K, 20K and 2K in applied magnetic fields up to12 Tesla, which showed very low MR in comparison to pure Bi2Te3 crystal.Temperature dependence of DC magnetization measurements show the FeBi2Te4crystal to be mainly of ferromagnetic (FM) or ferri-magnetic nature above 295K, albeit a secondary weak magnetic transition is seen at 54-46K as well.Detailed isothermal magnetization (MH) results showed that FM saturation momentat 295K is 0.00213emu/g, which is nearly invariant till 400 K. Summary, we hadgrown an MTI FeBi2Te4 single crystal, which may be a possible entrant forQuantum Anomalous Hall (QAH) effect at room temperature or above.

Crystal Growth and characterization of possible New Magnetic Topological Insulators FeBi2Te4