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Topological insulators (TIs) host unusual surface states with Diracdispersion and helical spin texture and hold high potentials for novelapplications in spintronics and quantum computing. Control of the chemicalpotential in these materials is challenging but crucial to realizing the hotlypursued exotic physics, including efficient spin generation1,2, MajoranaFermions3-5, and exciton condensation6,7. Here we report a simple and effectivemethod that can in-situ tune the chemical potential of single-crystalBi2-xSbxSe3 nanoribbons, with a magnitude significantly larger than traditionalelectrostatic gating. An electric field parallel to a device channel can shiftthe chemical potential across the Dirac point, both inside and outside thechannel. We attribute this non-local reversible modulation of chemicalpotential to electric-field-induced charge hopping among defect states, furthersupported by photocurrent mapping. Our approach enables engineering chemicalpotential distributions in TIs and opens up tremendous opportunities forinvestigating fundamental transport mechanisms of charge and compositeparticles in these materials.

Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration