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The separation of hot carriers in semiconductors is of interest forapplications such as thermovoltaic photodetection and third-generationphotovoltaics. Semiconductor nanowires offer several potential advantages foreffective hot-carrier separation such as: a high degree of control andflexibility in heterostructure-based band engineering, increased hot-carriertemperatures compared to bulk, and a geometry well suited for local control oflight absorption. Indeed, InAs nanowires with a short InP energy barrier havebeen observed to produce electric power under global illumination, with anopen-circuit voltage exceeding the Shockley-Queisser limit. To understand thisbehaviour in more detail, it is necessary to maintain control over the preciselocation of electron-hole pair-generation in the nanowire. In this work weperform electron-beam induced current measurements with high spatialresolution, and demonstrate the role of the InP barrier in extracting energeticelectrons. We interprete the results in terms of hot-carrier separation, andextract estimates of the hot carrier mean free path.

Hot-Carrier Separation in Heterostructure Nanowires observed by Electron-Beam Induced Current