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The commercialization of non-volatile memories based on ferroelectrictransistors (FeFETs) has remained elusive due to scaling, retention, andendurance issues. Thus, it is important to develop accurate characterizationtools to quantify the scaling and reliability limits of FeFETs. In this work,we propose to exploit an analytical expression for the Memory Window (MW, i.e.,the difference between the threshold voltages due to polarization switching) asa tool to: i) identify a universal scaling behavior of MW regardless of theferroelectric material; ii) predict endurance and explain its weak dependenceon writing conditions; iii) give an alternative explanation for MW being lowerthan theoretical limits; and, based on this, iv) devise strategies to maximizeMW for a given ferroelectric thickness. According to these findings, thecharacterization and analysis of MW would enable the systematic comparison ofnext-generation FeFET based on emerging ferroelectric materials.

A Memory Window Expression to Predict the Scaling Trends and Endurance of FeFETs