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In this work, we have investigated a 2D model of band-to-band tunneling basedon 2-band model and implemented it using 2D NEGF formalism. Being 2D in nature,this model better addresses the variation in the directionality of thetunneling process occurring in most practical TFET device structures. It alsoworks as a compromise between semi-classical and multiband quantum simulationof TFETs. In this work, we have presented a sound step by step mathematicaldevelopment of the numerical model. We have also discussed how this model canbe implemented in simulators and pointed out a few optimizations that can bemade to reduce complexity and to save time. Finally, we have performedelaborate simulations for a practical TFET design and compared the results withcommercially available TCAD simulations, to point out the limitations of thesimplistic models that are frequently used, and how our model overcomes theselimitations.

An Improved Physics Based Numerical Model of Tunnel FET Using 2D NEGF Formalism