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The presence of elemental vacancies in materials is inevitable according tostatistical thermodynamics, which will decide the chemical and physicalproperties of the investigated system. However, the controlled manipulation ofvacancies for specific applications is a challenge. Here we report a facilemethod for creating large concentrations of S vacancies in the inert basalplane of MoS2 supported on semimetal CoMoP2. With a small applied potential, Satoms can be removed in the form of H2S due to the optimized free energy offormation. The existence of vacancies favors electron injection from theelectrode to the active site by decreasing the contact resistance. As aconsequence, the activity is increased by 221 % with the vacancy-rich MoS2 aselectrocatalyst for hydrogen evolution reaction (HER). A small overpotential of75 mV is needed to deliver a current density of 10 mA cm-2, which is consideredamong the best values achieved for MoS2. It is envisaged that this work mayprovide a new strategy for utilizing the semimetal phase for structuring MoS2into a multi-functional material.

Synergistically creating sulfur vacancies in semimetal-supported amorphous MoS2 for efficient hydrogen evolution