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Inorganic molecular materials such as tin oxo cages are a promisinggeneration of photoresists compatible with the demands of the recentlydeveloped Extreme UltraViolet (EUV) lithography technology. Therefore, adetailed understanding of the photon-induced reactions which occur inphotoresists after exposure is important. We used XUV broadband laser pulses inthe range of 25-40 eV from a table-top high-harmonic source to expose thinfilms of the tin oxo cage resist to shed light on some of the photo-inducedchemistry via XUV absorption spectroscopy. During the exposure, the transmittedspectra were recorded and a noticeable absorbance decrease was observed in theresist. Dill parameters were extracted to quantify the XUV induced conversionand compared to EUV exposure results at 92 eV. Based on the absorption changes,we estimate that approximately 60% of tin-carbon bonds are cleaved at the endof the exposure.

XUV Induced Bleaching of a Tin Oxo Cage Photoresist Studied by High Harmonic Absorption Spectroscopy