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This study demonstrates that a space charge layer is formed on dislocationduring mechanical deformation at elevated temperature. High density ofdislocation lines is generated in bulk single crystalline Y2O3 stabilized ZrO2(YSZ) by uniaxial compression at elevated temperature. The creation ofdislocation is proven with transmission electron microscopy (TEM). Then,energy-dispersive X-ray spectroscopy (EDS) and electron energy lossspectroscopy (EELS) are used to explore the changes in the composition on andaway from the dislocation lines. Also, it is clarified that segregation ofdopant atoms (yttrium) on the dislocation line is induced by high temperatureannealing. Comparing the compositional variations with and without thermalannealing, we study the space charge layer formed on dislocation lines in adoped system.

Chemical characterization of dislocation in yttria-stabilized zirconia