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In this work we study the performance of silicon photomultiplier (SiPM) lightsensors after exposure to the JULIC cyclotron proton beam, of energy $\sim$ 39MeV, relative to their performance before exposure. The SiPM devices used inthis study show a significant change in their behavior and downward shift oftheir breakdown voltage by as much as $\sim$ 0.4$\pm$0.1 V. Single photonmeasurements appear to be no longer possible for the SiPMs under study afterexposure to a dose of $\sim$ 0.2 Gy (corresponding to an integrated proton fluxof $\sim$$\phi_{p}$=1.06x10$^{8}$ p/cm$^{2}$). No visible damage to the surfaceof the devices was caused by the exposure.

Study of Silicon Photomultiplier Radiation Hardness with Proton Beam from the JULIC Cyclotron