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Recent experimental work on Au thin films demonstrated signs of chargecurrent-induced spin polarization through open circuit voltage measurements. Inthis study, we are investigating the underlying mechanism(s) that induces thismeasured signal in the Au devices. We determine the theoretically expected spinpolarization from both Rashba-Edelstein effect and bulk spin Hall effect. Thediscrepancy in the scaling of the measured signal as a function of thethickness of the Au thin film in the two cases is our key to differentiatebetween the two effects when compared to experimental data. Experiments showreversal of spin polarization at a critical thickness which reveals thepresence of multiple spin polarization mechanisms. Characteristics of bothRashbaEdelstein and spin Hall effects are observed in different thicknessregimes. In addition, we study the magnetoresistance of the same Au samples,which reveal the presence of weak anti-localization (WAL) at low temperaturesfor the low-thickness samples. More interestingly, it is revealed that the opencircuit voltage difference and magnetoresistance due to WAL have very similarscaling with film thickness and temperature, suggesting the crucial importanceof spin-orbit interaction in understanding the phenomenon.

Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures