English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) isattractive in large scale memory and neuromorphic applications as it isnon-filamentary, area scalable and has multiple resistance states along withexcellent endurance and retention. The PCMO RRAM exhibit area scalableresistive switching when in contact with the reactive electrode. The interfaceredox reaction based resistance switching is observed electrically. Yet,whether resistance change occurs through partial (close to interface) or entirebulk is largely debated. Essentially, a two-terminal device is unable toprovide direct evidence of the resistance change location in the PCMO RRAM. Inthis paper, we propose and experimentally demonstrate a novel three-terminalRRAM device in which a thin third terminal (~20nm) is inserted laterally in atypical vertical 2 terminal RRAM device of PCMO thickness of ~80nm. Using the3T-RRAM method, we show that resistance change occurs largely at the upper bulk(near reactive electrode interface) - which is highly asymmetric. Yet itproduces SCLC based resistance change with symmetric IV characteristics. It isthe first time that an interface redox and bulk SCLC based resistance changehas been experimentally shown as correlated and consistent - enabled by the 3rdterminal of the RRAM. Such a study enables a critical understanding of thedevice which enables the design and development of PCMO RRAM for memory andneuromorphic computing applications.

Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM