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Heterostructures of two-dimensional (2D) and three-dimensional (3D) materialsform efficient devices for utilizing the properties of both classes ofmaterials. Graphene/silicon (G/Si) Schottky diodes have been studiedextensively with respect to their optoelectronic properties. Here, we introducea method to analyze measured capacitance-voltage data of G/Si Schottky diodesconnected in parallel with G/silicon dioxide/Si (GIS) capacitors. We alsodemonstrate the accurate extraction of the built-in potential ($\Phi$$_{bi}$)and the Schottky barrier height from the measurement data independent of theRichardson constant.

Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes