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Electrical conduction mechanisms in the disordered material system isexperimentally studied for p-type amorphous germanium (a-Ge) used forhigh-purity Ge detector contacts. The localization length and the hoppingparameters in a-Ge are determined using the surface leakage current measuredfrom three high-purity planar Ge detectors. The temperature-dependent hoppingdistance and hopping energy are obtained for a-Ge fabricated as the electricalcontact materials for high-purity Ge planar detectors. As a result, we findthat the hopping energy in a-Ge increases as temperature increases while thehopping distance in a-Ge decreases as temperature increases. The localizationlength of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^\circ$ to$5.07^{-0.83}_{+2.58}A^\circ$, depending on the density of states near theFermi energy level within bandgap. Using these parameters, we predict that thesurface leakage current from a Ge detector with a-Ge contacts can be muchsmaller than one yocto amp (yA) at helium temperature, suitable for rare-eventphysics searches.

Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors