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Two dimensional materials are an emerging class of materials which istransforming the present day research activity on a phenomenal scale. Hexagonalboron nitride is a wide band gap 2D material which is an excellent substratefor graphene based electronics. To achieve the full potential of hBN scalableand high yield growth procedures are required. Here, we demonstrate thesynthesis of hBN by reactive R.F magnetron sputtering over copper foil. Copperfoil preparation conditions determines the phase selectivity of BN films.Deposition of hBN on non-electropolished Cu foils with predominant (100)orientation resulted in growth of BN islands with mixed cubic and hexagonal BNphase. On electropolished Cu foils with high symmetry hexagonal (111) surfacetermination we get growth of continuous hexagonal BN films, while on Cu foilshaving (100) and (110) orientation with lower symmetry growth of cubic BN filmsare observed.

Investigating the role of Cu foil orientation in the growth of large BN films synthesized by reactive RF magnetron sputtering