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Structural defects are widely regarded as detrimental to the optoelectronicproperties of monolayer transition metal dichalcogenides, leading to concertedefforts to eliminate defects via improved materials growth or post-growthpassivation. Here, using steady-state and ultrafast optical spectroscopy,supported by ab initio calculations, we demonstrate that sulfur vacancy defectsact as exciton traps. Current chemical treatments do not passivate these sites,leading to decreased mobility and trap-limited photoluminescence. We present ageneralizable treatment protocol based on the use of passivating agents such asthiols or sulfides in combination with a Lewis acid to passivate sulfurvacancies in monolayer MoS$_2$ and WS$_2$, increasing photoluminescence up to275 fold, while maintaining mobilities. Our findings suggest a route for simpleand rational defect engineering strategies, where the passivating agent variesthe electronic properties, thereby allowing the design of new heterostructures.

The bright side of defects in MoS$_2$ and WS$_2$ and a generalizable chemical treatment protocol for defect passivation