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Transition metal dichalcogenides such as MoS$_2$ represent promisingcandidates for building blocks of ultra-thin nanophotonic devices. For suchapplications, vertically-oriented MoS$_2$ (v-MoS$_2$) nanosheets could beadvantageous as compared to conventional horizontal MoS$_2$ (h-MoS$_2$) giventhat their inherent broken symmetry would favor an enhanced nonlinear response.However, the current lack of a controllable and reproducible fabricationstrategy for v-MoS$_2$ limits the exploration of this potential. Here wepresent a systematic study of the growth of v-MoS$_2$ nanosheets based on thesulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that thesulfurization process at high temperatures is driven by the diffusion of Sulfurfrom the vapor-solid interface to the Mo seed layer. Furthermore, we verify anenhanced nonlinear response in the resulting v-MoS$_2$ nanostructures ascompared to their horizontal counterparts. Our results represent a steppingstone towards the fabrication of low-dimensional TMD-based nanostructures forversatile nonlinear nanophotonic devices.

Vertically-oriented MoS$_2$ nanosheets for nonlinear optical devices