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GaN nanowires grown by molecular beam epitaxy generally suffer from dominantnonradiative recombination, which is believed to originate from point defects.To suppress the formation of these defects, we explore the synthesis of GaNnanowires at temperatures up to 915 ${\deg}C$ enabled by the use of thermallystable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed boundexciton decay times approaching those measured for state-of-the-art bulk GaN.However, the decay time is not correlated with the growth temperature, butrather with the nanowire diameter. The inverse dependence of the decay time ondiameter suggests that the nonradiative process in GaN nanowires is notcontrolled by the defect density, but by the field ionization of excitons inthe radial electric field caused by surface band bending. We propose a unifiedmechanism accounting for nonradiative recombination in GaN nanowires ofarbitrary diameter.

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields