English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samplesare prepared by a new mechanical exfoliation method. Based on such high-qualitysamples, we report the first direct electronic structure study on them, usingstandard high resolution angle-resolved photoemission spectroscopy (ARPES). Adirect band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2.Similar valence band alignment is also observed in bilayer MoTe2,supporting anassumption of a analogous direct gap semiconductor on it. Our measurementsindicate a rather large band splitting of 212meV at the valence band maximum(VBM) in monolayer MoTe2, and the splitting is systematically enlarged withlayer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE bandcalculation on these materials show excellent agreement with ARPES results.Some fundamental electronic parameters are derived from the experimental andcalculated electronic structures. Our findings lay a foundation for furtherapplication-related study on monolayer and bilayer MoTe2.

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2