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We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) andconducted a theoretical estimation of square-low rectifying performance for aterahertz electromagnetic wave. Effective current responsivity up to 0.09 A/Wat 1 THz was obtained under zero-bias voltage condition at room temperature.The result is approximately half the value of the best result obtained forexperiments in semiconductor-based diodes, performed under similar conditions.The study strongly suggests that this MTJ system has a great potential for therectifying element of the terahertz wave.

Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction