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High frequency signals propagate along the edges of conductors. If theconductors are electroplated, then the seed layer forms at least one edge, socare must be taken to insure the electrical quality of these layers. In thiswork, we study the initial quality of SAM-based seed layers that are compatiblewith complex surfaces including through-silicon vias (TSVs), as are used invia-last three-dimensional semiconductor device packaging. The conformal andelectrical quality of the seed metal is very important. Also important for amultifunction seed layer is its ability as a barrier layer, which protects thesubstrate from high temperature diffusion of the deposited metal. Thus, thebarrier layer must be robust enough to withstand diffusion, yet thin enough toprovide a conformal surface that allows metal seed layer deposition. Standardbarrier layer deposition methods such as evaporation or sputtering requireeither a line of sight from the source or aspect ratios large enough to providescattering from the background gas within the structure to coat all surfaces.Electrochemical and chemical vapor deposition provide alternatives, butconcerns arise about contamination and compatibility with radio frequency orhigh-speed digital signals. We propose a barrier layer based on an aromaticself-assembled monolayer (SAM) for use in electroless copper seed layerdeposition. The viability of the SAM barrier layer is determined by the qualityof the deposited copper seed film, judged quantitatively by thin filmresistivity and qualitatively by surface adhesion and morphological propertiessuch as cracks and bubbles. Insights to the origins of problems and an optimalscheme are described. Extensions for use as a photolithographic resist layerare suggested. Our SAM approach for TSV applications yields a 'smart' seedlayer that can be used with a 'simple,' scalloped, easy to fabricate, via hole.

A barrier/seed system for electroless metallization on complex surfaces using (aminomethylaminoethyl)phenethyltrimethoxysilane self-assembled films