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The bandgap dependence on the number of atomic layers of some families of2D-materials, can be exploited to engineer and use lateral heterostructures(LHs) as high-performance Field-Effect Transistors (FET). This option canprovide very good lattice matching as well as high heterointerface quality.More importantly, this bandgap modulation with layer stacking can give rise tosteep transitions in the density of states (DOS) of the 2D material, that caneventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETsthanks to an energy-filtering source. We have observed this effect in the caseof a PdS2 LH-FET due to the particular density of states of its bilayerconfiguration. Our results are based on ab initio and multiscale materials anddevice modeling, and incite the exploration of the 2D-material design space inorder to find more abrupt DOS transitions and better suitable candidates.

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source