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Transition-metal oxide films, demonstrating the effects of both threshold andnonvolatile memory resistive switching, have been recently proposed ascandidate materials for storage-class memory. In this work we describe someexperimental results on threshold switching in a number of various transitionmetal (V, Ti, Fe, Nb, Mo, W, Hf, Zr, Mn, Y, and Ta) oxide films obtained byanodic oxidation. Then, the results concerning the effects of bistableresistive switching in MOM and MOS structures on the basis of such oxides asV2O5, Nb2O5, and NiO are presented. It is shown that sandwich structures on thebasis of the Au/V2O5/SiO2/Si, Nb/Nb2O5/Au, and Pt/NiO/Pt can be used as memoryelements for ReRAM applications. Finally, model approximations are developed inorder to describe theoretically the effect of nonvolatile unipolar switching inPt NiO-Pt structures.

Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications