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Quasi-two-dimensional (quasi-2D) materials hold promise for futureelectronics because of their unique band structures that result in electronicand mechanical properties sensitive to crystal strains in all three dimensions.Quantifying crystal strain is a prerequisite to correlating it with theperformance of the device, and calls for high resolution but spatially resolvedrapid characterization methods. Here we show that using fly-scan nano X-raydiffraction we can accomplish a tensile strain sensitivity below 0.001% with aspatial resolution of better than 80 nm over a spatial extent of 100 $\mu$m onquasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a$\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beamacross and rotating the sample. We demonstrate that the strain distributionaround micron and sub-micron sized 'bubbles' that are present in the sample maybe reconstructed from these images. The experiments use state of the artsynchrotron instrumentation, and will allow rapid and non-intrusive strainmapping of thin film samples and electronic devices based on quasi 2Dmaterials.

Complete Strain Mapping of Nanosheets of Tantalum Disulfide