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p-type doping from the dielectric/semiconductor interface of a SnO2 thin filmtransistor (TFT) has been utilized to develop high carrier mobility balancedambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gatetop-contact TFTs have been fabricated by using two different ion-conductingoxide dielectrics which contain trivalent atoms. These ion-conductingdielectrics are LilnO2 and LiGaO2 respectively, containing mobile Li+ ion.During SnO2 thin film fabrication on top of the ionic dielectric, thosetrivalent atoms allow p- doping to the interfacial SnO2 layer to introduce thehole conduction in channel of TFT. To realize this interfacial dopingphenomena, a reference TFT has been fabricated with Li2ZnO2 dielectric underthe same condition that contains divalent zinc (Zn) atom. Our comparativeelectrical data indicates that TFTs with LilnO2 and LiGaO2 dielectric areambipolar in nature whereas, TFT with Li2ZnO2 dielectric is a unipolarn-channel transistor which reveals the interfacial doping of SnO2. Mostinterestingly, by using LilnO2 dielectric, we are capable to fabricated 1.0 Vbalanced ambipolar TFT with a high electron and hole mobility values of 7 cm2V-1 s-1and 8 cm2 V-1 s-1 respectively with an on/off ratio >102 for bothoperations which has been utilized for low-voltage CMOS inverter fabrication.

Dielectric/semiconductor interfacial doping to develop solution  processed high performance 1 V ambipolar oxide-transistor and its application  as CMOS inverter