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We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs)with a high density (3.82E+6 / mm2) on the Si (111) substrate using a simplethermal evaporation method. The thickness and trilateral lengths of a singletriangular nanoplate were statistically estimated by atomic force microscopy(AFM) as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electronmicroscopy (TEM) images and X-ray diffraction (XRD) patterns show that the TNAswere composed of single crystalline GeSe phase. The Se-related defects in thelattice were also revealed by TEM images and Raman vibration modes. Unlikepreviously reported GeSe compounds, the GeSe TNAs exhibitedtemperature-dependent photoluminescence (PL). In addition, not previouslyreported PL peak (1.25 eV) of the 44 nm thick TNAs at 5 K was in the gapsbetween those of GeSe monolayers (1.5 nm) and thin films (400 nm), revealing aclose relationship between the PL peak and the thickness of GeSe. Thehigh-density structure and temperature-dependent PL of the TNAs on the Sisubstrate may be useful for temperature controllable semiconductor nanodevices.

Synthesis and temperature-dependent photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates