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Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolarelectric fields have extensive applications in energy-efficient memory andlogic devices. Voltage-controlled magnetic anisotropy linearly lowers theenergy barrier of ferromagnetic layer via electric field effect and efficientlyswitches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolarelectric field effect switching of 100-nm p-MTJs with a syntheticantiferromagnetic free layer through voltage-controlled exchange coupling(VCEC). The switching current density, ~1.1x10^5 A/cm^2, is one order ofmagnitude lower than that of the best-reported spin-transfer torque devices.Theoretical results suggest that electric field induces aferromagnetic-antiferromagnetic exchange coupling transition of the syntheticantiferromagnetic free layer and generates a field-like interlayer exchangecoupling torque, which cause the bidirectional magnetization switching ofp-MTJs. A preliminary benchmarking simulation estimates that VCEC dissipates anorder of magnitude lower writing energy compared to spin-transfer torque at the15-nm technology node. These results could eliminate the major obstacle in thedevelopment of spin memory devices beyond their embedded applications.

Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling