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Two-dimensional (2D) transition metal dichalcogenides (TMDs) such asmolybdenum disulfide (MoS2) have been intensively investigated because of theirexclusive physical properties for advanced electronics and optoelectronics. Inthe present work, we study the MoS2 transistor based on a novel tri-gate devicearchitecture, with dual-gate (Dual-G) in the channel and the buried side-gate(Side-G) for the source/drain regions. All gates can be independentlycontrolled without interference. For a MoS2 sheet with a thickness of 3.6 nm,the Schottky barrier (SB) and non-overlapped channel region can be effectivelytuned by electrostatically doping the source/drain regions with Side-G. Thus,the extrinsic resistance can be effectively lowered, and a boost of theON-state current can be achieved. Meanwhile, the channel control remainsefficient under the Dual-G mode, with an ON-OFF current ratio of 3E7 andsubthreshold swing of 83 mV/decade. The corresponding band diagram is alsodiscussed to illustrate the device operation mechanism. This novel devicestructure opens up a new way toward fabrication of high-performance devicesbased on 2D-TMDs.

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts