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Because high electron mobility transistors (HEMTs) often exhibit significantgate leakage during high-temperature operation, the choice of Schottky metal iscritical. Increased gate leakage and reduced ON/OFF ratio are unsuitable forthe design of high-temperature electronics and integrated circuits. This paperpresents high-temperature characteristics of depletion-mode molybdenum trioxide(MoO${_3}$)-gated InAlN/GaN-on-silicon HEMTs in air. After a room temperatureoxidation of the Mo for 10 weeks, the leakage of the HEMT is reduced over 60times compared to the as-deposited Mo. The use of MoO${_3}$ as the Schottkygate material enables low gate leakage, resulting in a high ON/OFF currentratio of 1.2 x 10${^8}$ at 25{\deg}C and 1.2 x 10${^5}$ at 300{\deg}C in air.At 400{\deg}C, gate control of the InAlN/GaN two-dimensional electron gas(2DEG) channel is lost and unrecoverable. Here, this permanent device failureis attributed to volatilization of the MoO${_3}$ gate due to the presence ofwater vapor in air. Passivation of the device with SiN enables operation up to500{\deg}C, but also increases the leakage current. The suppression of gateleakage via Mo oxidation and resulting high ON/OFF ratio paves the way forviable high-temperature GaN-based electronics that can function beyond thethermal limit of silicon once proper passivation is achieved.

Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300{\deg}C