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The electrical and structural characteristics of 50 nm zinc oxide (ZnO)metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected toproton irradiation at different temperatures are reported and compared. Weirradiated the devices with 200 keV protons to a fluence of 1016 cm-2.Examination of the X-ray diffraction (XRD) rocking curves indicates a stronglypreferred (100) orientation for the grains of the as-deposited film, withdecreases in crystal quality for all irradiated samples. In addition, peakshifts in XRD and Raman spectra of the control sample relative to well-knowntheoretical positions are indicative of tensile strain in the as-deposited ZnOfilms. We observed shifts of these peaks towards theoretical unstrainedpositions in the irradiated films relative to the as-deposited film indicatepartial relaxation of this strain. Raman spectra also indicate increases ofoxygen vacancies (V_O ) and zinc interstitials (Zn_i ) relative to the controlsample. Additionally, photocurrent versus time measurements showed up to 2xincreases in time constants for samples irradiated at lower temperatures monthsafter irradiation, indicating that the defects introduced by suppression ofthermally-activated dynamic annealing process has a long-term deleteriouseffect on device performance.

Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors