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Spin-torque memristors were proposed in 2009, which could provide fast,low-power and infinite memristive behavior for large-density non-volatilememory and neuromorphic computing. However, the strict requirements ofcombining high magnetoresistance, stable intermediate states and spin-polarizedcurrent switching in a single device pose difficulties in physicalimplementation. Here, we experimentally demonstrate a nanoscale spin-torquememristor based on a perpendicular-anisotropy magnetic tunnel junction with aCoFeB/W/CoFeB composite free layer structure. Its tunneling magnetoresistanceis higher than 200%, and memristive behavior can be realized by spin-transfertorque switching. Memristive states are maintained by robust domain wallpinning around clusters of W atoms, where nanoscale vertical chiral spintextures could be formed through the competition between opposingDzyaloshinskii-Moriya interactions and the fluctuating interlayer couplingcaused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeBfree layers. Spike-timing-dependent plasticity is also demonstrated in thisdevice.

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture