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Monoclinic scheelite bismuth vanadate (BiVO4) is a promising photoanode forwater splitting yet the PEC performance is limited due to its relatively higher(2.4 eV) band gap. Here, we successfully decreased its the band gap to 1.72 eVby controlled antimony alloying. Low bandgap antimony alloyed bismuth vanadiumoxide (Sb:BiVO4) thin film was prepared by RF sputtering of high purityhomemade target, fabricated by solid-state reaction using a mixture of Sb2O3,Bi2O3, and V2O5 powders with desired stoichiometric ratios. Several growthparameters, powder crystallography, post-deposition effects, and surfacetreatments, thickness dependence, effect of electrolytes on photocorrosion werestudied along with its optical and electrochemical characterization. Wediscovered that Sb:BiVO4 is a direct band gap material in the visible lightrange (1.72 eV) and a valence band position suitable for driving wateroxidation reaction under illumination. Furthermore, hole diffusion length isincreased with antimony alloying and achieved optimum thickness of 400 nm forhigher photocurrent. The controllably prepared Sb:BiVO4 particles are havingthe sizes of 10-15 nm in room temperature deposition and can be grown up to 0.5microns under air annealing.

Study of RF Sputtered Antimony Alloyed Bismuth Vanadium Oxide (Sb:BiVO4)  Thin Films for Enhanced Photoelectrochemical (PEC) performance from Bandgap  Modulation to Thickness Optimization