English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

In this paper, RF sputtered antimony vanadium oxide (SbVO4) thin films andits characterization are reported. High purity sputtering targets werefabricated by sintering a mixture of Sb2O3 and V2O5 powders. Thin films weredeposited by reactive sputtering at various temperature and argon/oxygenpartial pressures. Several growth parameters and surface chemistry were studiedby applying numerous optical and electrochemical characterization technique. Itis found that SbVO4 exhibits an indirect band gap in the range of 1.89 eV to2.36 eV and has desirable valence band position to drive water oxidationreaction under illumination. The bandgap depends heavily on stoichiometry ofthe film and can be modulated by incorporating controlled amount of oxygen gasin plasma environment. Optimized SbVO4 photoanodes was designed and tested forphotoelectrochemical water oxidation catalysis. Preliminary studies show thatthese electrodes possess n-type catalytic behavior in alkaline media. Theprepared SbVO4 thin films, with typical film thickness was around 400 nm,contain nanoparticles having the sizes of 10-15 nm.

Controlled Preparation, Characterization, and Bandgap Modulation of RF Sputtered Antimony Vanadium Oxide (SbVO4) Thin Films