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In 2D-semiconductor-based field-effect transistors and optoelectronicdevices, metal-semiconductor junctions are one of the crucial factorsdetermining device performance. The Fermi-level (FL) pinning effect, whichcommonly caused by interfacial gap states, severely limits the tunability ofjunction characteristics, including barrier height and contact resistance. Atunneling contact scheme has been suggested to address the FL pinning issue inmetal-2D-semiconductor junctions, whereas the experimental realization is stillelusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier canrealize a pronounced FL depinning in indium selenide (InSe) transistors,exhibiting a large pinning factor of 0.5 and a highly modulated Schottkybarrier height. The FL depinning can be attributed to the suppression of metal-and disorder-induced gap states as a result of the high-quality tunnelingcontacts. Structural characterizations indicate uniform and atomically thinsurface oxidation layer inherent from nature of van der Waals materials andatomically sharp oxide-2D-semiconductor interfaces. Moreover, by effectivelylowering the Schottky barrier height, we achieve an electron mobility of 2160cm$^2$/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. Therealization of strong FL depinning in high-mobility InSe transistors with theoxidized monolayer presents a viable strategy to exploit layered semiconductorsin contact engineering for advanced electronics and optoelectronics.

Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors